Characteristics of the hydrogenated amorphous silicon-crystalline cadmium telluride heterojunction diode

The current-voltage characteristics and visible and X-ray photocurrent characteristics have been investigated for a heterojunction diode constructed of plasma-deposited hydrogenated amorphous silicon (a-Si:H) and single crystal cadmium telluride (c-CdTe). Devices showed low reverse bias saturation c...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1987-11, Vol.26 (11), p.L1812-L1814
Main Authors: MEIKLE, S. G, HATANAKA, Y
Format: Article
Language:English
Subjects:
Applied sciences
Exact sciences and technology
Other techniques and industries
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Summary:The current-voltage characteristics and visible and X-ray photocurrent characteristics have been investigated for a heterojunction diode constructed of plasma-deposited hydrogenated amorphous silicon (a-Si:H) and single crystal cadmium telluride (c-CdTe). Devices showed low reverse bias saturation current, a photoresponse spectrum ranging from approximately 400-800 nm and a 3 decade increase in reverse bias saturation current when exposed to 40 keV X-rays.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.26.l1812