Raman scattering measurements of strains in ZnSe epitaxial films on GaAs

Raman spectroscopy has been applied to the evaluation of strains in ZnSe films grown by molecular beam epitaxy on GaAs. The observed variation of the ZnSe LO phonon frequency with thickness is explained well in terms of the conversion from the elastic strain due to accommodation of the lattice misma...

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Published in:Japanese Journal of Applied Physics 1988-07, Vol.27 (7), p.1327-1330
Main Authors: NAKASHIMA, S, FUJII, A, MIZOGUCHI, K, MITSUISHI, A, YONEDA, K
Format: Article
Language:English
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Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Mechanical and acoustical properties of condensed matter
Mechanical properties of solids
Physics
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description Raman spectroscopy has been applied to the evaluation of strains in ZnSe films grown by molecular beam epitaxy on GaAs. The observed variation of the ZnSe LO phonon frequency with thickness is explained well in terms of the conversion from the elastic strain due to accommodation of the lattice mismatch to the thermal strain due to the difference in thermal expansion coefficients of the substrate and epitaxial film. The strains estimated from the Raman measurements are consistent with the results obtained from X-ray analyses by other researchers.
doi_str_mv 10.1143/jjap.27.1327
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source Institute of Physics IOPscience extra; Institute of Physics
subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Mechanical and acoustical properties of condensed matter
Mechanical properties of solids
Physics
title Raman scattering measurements of strains in ZnSe epitaxial films on GaAs
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