Dislocation reduction in MBE-grown Ge on Si (001) by in situ thermal annealing

The threading dislocation density in Ge layers grown by molecular beam epitaxy on Si substrates can be reduced by insitu thermal annealing during deposition. The Ge/Si interfaces of nonannealed and insitu annealed samples are observed by plan-view transmission electron microscopy to understand the d...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1988-09, Vol.27 (9), p.L1591-L1593
Main Authors: FUKUDA, Y, KOHAMA, Y, SEKI, M, OHMACHI, Y
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:The threading dislocation density in Ge layers grown by molecular beam epitaxy on Si substrates can be reduced by insitu thermal annealing during deposition. The Ge/Si interfaces of nonannealed and insitu annealed samples are observed by plan-view transmission electron microscopy to understand the dislocation-reduction mechanism. The results suggest the following: (1) the formation of dislocation networks and half-loops terminating at the interfacial misfit dislocation array is enhanced by the thermally induced strain of insitu annealing; (2) the dominant mechanism of dislocation reduction is the shrinkage of dislocation networks and half-loops into the interface; (3) dislocation line tension is the driving force of this shrinkage.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.27.l1591