Rapid growth of diamond films by arc discharge plasma CVD

Diamond films have been synthsized by arc discharge plasma CVD in a hydrogen-argon-ethanol mixture gas. The arc discharge power is about 560 W and the typical gas flow rate is 500–2000 cm 3 /min, respectively. The growth rate of diamond films has been obtained about 200–250 µm/h which is higher than...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1988-09, Vol.27 (9), p.L1600-L1602
Main Authors: AKATSUKA, F, HIROSE, Y, KOMAKI, K
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Diamond films have been synthsized by arc discharge plasma CVD in a hydrogen-argon-ethanol mixture gas. The arc discharge power is about 560 W and the typical gas flow rate is 500–2000 cm 3 /min, respectively. The growth rate of diamond films has been obtained about 200–250 µm/h which is higher than that of other CVD methods. The obtained diamond films are identified as natural cubic diamond by X-ray diffraction. It is found that graphitic and amorphous carbon are not contained in the diamond films by Raman spectra. Atomic hydrogen (H) plays important roles in the growth of high-quality diamonds.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.27.l1600