Comparative study of ZnSe growth rate by metal organic molecular beam epitaxy using different Zn sources

The substrate temperature dependence of ZnSe growth rate is investigated using dimethyl zinc and diethyl zinc as Zn sources in metalorganic molecular beam epitaxy under the same flux intensity conditions. The growth rate for dimethyl zinc is higher at substrate temperatures above 450°C, and more sen...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1988-09, Vol.27 (9), p.L1728-L1730
Main Authors: KOBAYASHI, N, SHINODA, Y, KOBAYASHI, Y
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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Summary:The substrate temperature dependence of ZnSe growth rate is investigated using dimethyl zinc and diethyl zinc as Zn sources in metalorganic molecular beam epitaxy under the same flux intensity conditions. The growth rate for dimethyl zinc is higher at substrate temperatures above 450°C, and more sensitive to changes in substrate temperature than the growth rate for diethyl zinc. The mechanism resulting in the growth rate difference observed in this study is discussed in relation to the desorption process preceding ZnSe congruent evaporation.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.27.l1728