Epitaxial growth of Al on Si by gas-temperature-controlled chemical vapor deposition

• Published in: Japanese Journal of Applied Physics 1988-09, Vol.27 (9), p.L1775-L1777
• Main Authors: KOBAYASHI, T, SEKIGUCHI, A, HOSOKAWA, N, ASAMAKI, T
• Format: Article
• Language: English
• Subjects: Analysing. Testing. Standards; Applied sciences; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Measurement of properties and materials state; Metals, semimetals and alloys; Metals. Metallurgy; Nondestructive testing; Physics; Specific materials; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.27.l1775

Epitaxial Al(111) film was deposited on Si(111) by low-pressure chemical vapor deposition with the use of tri-isobutyl aluminum (TIBA) at the substrate temperature of 400°C with the deposition rete of 0.9 µm/min. It was necessary for epitaxy to preheat the TIBA gas just before the deposition on the substrate (gas-temperature controlling). The film surface was very smooth; reflectance was higher than 90%. Streaks were observed in RHEED patterns. The rocking curve measured by X-ray diffraction was very narrow. Analysis by SIMS showed the film contained about 0.1% of Si and 20 ppm of O, C, and H. No hillock appeared on the film after 430°C annealing for 40 min.