Correlation between photoluminescence and surface-state density on GaAs surfaces subjected to various surface treatments

Relationship between band edge photoluminescence (PL) and surface states is rigorously analyzed on computer, using the disorder-induced gap state (DIGS) model, and is compared with experiments on GaAs surfaces subjected to various treatments. It is shown that PL intensity is directly correlated with...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1988-11, Vol.27 (11), p.L2177-L2179
Main Authors: HASEGAWA, H, SAITOH, T, KONISHI, S, ISHII, H, OHNO, H
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:Relationship between band edge photoluminescence (PL) and surface states is rigorously analyzed on computer, using the disorder-induced gap state (DIGS) model, and is compared with experiments on GaAs surfaces subjected to various treatments. It is shown that PL intensity is directly correlated with the effective surface recombination velocity, but is not necessarily directly correlated with the surface-state density ( N ss ) itself. PL enhancement by photochemical oxidation and by Na 2 S deposition is proposed to be due to a fixed negative charge, whereas photochemical treatment in HCl leads to significant reduction in N ss .
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.27.l2177