Enhancement of the capture rate of carriers in (111)-oriented GaAs/AlGaAs quantum well structures

A detailed analysis on the dependence of the photoluminescence spectrum on the excitation density in (111)- and (100)-oriented single-quantum-well (SQW) structures is presented. The results show that the capture rate of photo-excited carriers in the barrier region by the SQW and the radiative recomb...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1988-05, Vol.27 (5), p.L762-L765
Main Authors: HAYAKAWA, T, KONDO, M, SUYAMA, T, TAKAHASHI, K, YAMAMOTO, S, HIJIKATA, T
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:A detailed analysis on the dependence of the photoluminescence spectrum on the excitation density in (111)- and (100)-oriented single-quantum-well (SQW) structures is presented. The results show that the capture rate of photo-excited carriers in the barrier region by the SQW and the radiative recombination rate in the SQW are enhanced in (111)-oriented SQW structures compared to those in (100)-oriented ones.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.27.l762