Enhancement of the capture rate of carriers in (111)-oriented GaAs/AlGaAs quantum well structures

A detailed analysis on the dependence of the photoluminescence spectrum on the excitation density in (111)- and (100)-oriented single-quantum-well (SQW) structures is presented. The results show that the capture rate of photo-excited carriers in the barrier region by the SQW and the radiative recomb...

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Published in:Japanese Journal of Applied Physics 1988-05, Vol.27 (5), p.L762-L765
Main Authors: HAYAKAWA, T, KONDO, M, SUYAMA, T, TAKAHASHI, K, YAMAMOTO, S, HIJIKATA, T
Format: Article
Language:English
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Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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cites cdi_FETCH-LOGICAL-c357t-306b99ff8402520744173903ebf5eb9f2565de60b48b5e1673565374d12568733
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container_title Japanese Journal of Applied Physics
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creator HAYAKAWA, T
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description A detailed analysis on the dependence of the photoluminescence spectrum on the excitation density in (111)- and (100)-oriented single-quantum-well (SQW) structures is presented. The results show that the capture rate of photo-excited carriers in the barrier region by the SQW and the radiative recombination rate in the SQW are enhanced in (111)-oriented SQW structures compared to those in (100)-oriented ones.
doi_str_mv 10.1143/jjap.27.l762
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source IOPscience journals; Institute of Physics
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
title Enhancement of the capture rate of carriers in (111)-oriented GaAs/AlGaAs quantum well structures
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