Characterization of boron-doped diamond film

Diamond films doped with boron were fabricated by the thermal filament CVD method. Powdered B 2 O 3 was used as the doping source. The films were identified as diamond by means of several methods including Raman spectroscopy. The resistivity of the films was inversely proportional to the B / C ratio...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1989-06, Vol.28 (6), p.1066-1071
Main Authors: OKANO, K, NARUKI, H, AKIBA, Y, KUROSU, T, IIDA, M, HIROSE, Y, NAKAMURA, T
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Diamond films doped with boron were fabricated by the thermal filament CVD method. Powdered B 2 O 3 was used as the doping source. The films were identified as diamond by means of several methods including Raman spectroscopy. The resistivity of the films was inversely proportional to the B / C ratio over four orders. The temperature dependence of current was measured and to fit this result to the theoretical calculation, the activation energy was evaluated.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.28.1066