p-Si/n-CdS heterojunction solar cells

p-Si/n-CdS heterojunction solar cells having CdS windows were fabricated by evaporating double layers of n-CdS films (n + -CdS layer on n-CdS layer) on p-Si single-crystal wafer. The electric and photoelectric characteristics were measured and discussed. Various preparation parameters affecting the...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1989-07, Vol.28 (7), p.1174-1177
Main Authors: HAYASHI, T, NISHIKURA, T, NISHIMURA, K, EMA, Y
Format: Article
Language:English
Subjects:
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:p-Si/n-CdS heterojunction solar cells having CdS windows were fabricated by evaporating double layers of n-CdS films (n + -CdS layer on n-CdS layer) on p-Si single-crystal wafer. The electric and photoelectric characteristics were measured and discussed. Various preparation parameters affecting the cell characteristics were discussed and the best condition for preparation of cells was found. Open-circuit voltage, short-circuit current and conversion efficiency measured under sunlight of input power intensity of 45 mW cm -2 ware 510 mV, 15mA cm -2 and 11.3%, respectively.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.28.1174