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Effects of Zn electrical activity on band gap energy in Zn-doped InGaAlP grown by metalorganic chemical vapor deposition

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1989-11, Vol.28 (11), p.L2092-L2094
Main Authors: NISHIKAWA, Y, ISHIKAWA, M, TSUBURAI, Y, KOKUBUN, Y
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.28.2092