Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation

A high-electrical-resistance region as high as 1×10 4 Ω·cm can be formed in Si-doped InP ( n =1×10 18 cm -3 ) layers by 8×10 14 cm -2 Ga focused ion beam (FIB) implantation and 500–600°C annealing. The clear photoresponse is also observed in the Ga-FIB-implanted diode structures after annealing. A d...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1989-12, Vol.28 (12A), p.L2119
Main Authors: Asahi, Hajime, Sumida, Hitoshi, Yu, Soon Jae, Emura, Shuichi, Gonda, Shun-ichi, Komuro, Masanori
Format: Article
Language:English
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Summary:A high-electrical-resistance region as high as 1×10 4 Ω·cm can be formed in Si-doped InP ( n =1×10 18 cm -3 ) layers by 8×10 14 cm -2 Ga focused ion beam (FIB) implantation and 500–600°C annealing. The clear photoresponse is also observed in the Ga-FIB-implanted diode structures after annealing. A drastic carrier concentration decrease and the existence of residual defects are confirmed by Raman scattering measurement.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.28.L2119