Electron-Beam-Induced Cl 2 Etching of GaAs

Electron-beam (EB)-induced Cl 2 etching of GaAs is performed for the first time. Etching occurs only in the area exposed to both the Cl 2 molecules and the EB. The etching rate is equal to that of a Cl 2 gas phase etching. The morphologies of the etched surfaces are slightly rough, but the photolumi...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1989-03, Vol.28 (3A), p.L515
Main Authors: Taneya, Mototaka, Sugimoto, Yoshimasa, Hidaka, Hiroshi, Akita, Kenzo
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electron-beam (EB)-induced Cl 2 etching of GaAs is performed for the first time. Etching occurs only in the area exposed to both the Cl 2 molecules and the EB. The etching rate is equal to that of a Cl 2 gas phase etching. The morphologies of the etched surfaces are slightly rough, but the photoluminescence intensity of the processed sample does not change as compared with that of the unprocessed sample. The etching characteristics predict that surface adsorbates act as a mask for a gas phase etching and that the EB plays an important part in patterning of the adsorbate mask.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.28.L515