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Cu Electromigration Effect on Cu 2-x Se Film Properties

Electrical and optical properties and structural change of vacuum-deposited Cu 2- x Se films due to electromigration have been investigated using Au/Cu 2- x Se/Cu(or Au) samples. DC voltages were applied to them to cause Cu migration. Under the bias in which the polarity of the Cu electrode was nega...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1990-10, Vol.29 (10R), p.2098
Main Author: Ema, Yoshinori
Format: Article
Language:English
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Summary:Electrical and optical properties and structural change of vacuum-deposited Cu 2- x Se films due to electromigration have been investigated using Au/Cu 2- x Se/Cu(or Au) samples. DC voltages were applied to them to cause Cu migration. Under the bias in which the polarity of the Cu electrode was negative, Cu in Cu 2- x Se films decreased gradually, which increased Cu vacancies and carrier density. Under the bias in which the Cu electrode was positive, Cu ions were supplied to Cu 2- x Se films and Cu vacancies were filled, which decreased carrier density and changed the film structure to α-Cu 2- x Se. Small blocks of Cu accumulation were formed at the negative electrode edge.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.29.2098