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Cu Electromigration Effect on Cu 2-x Se Film Properties
Electrical and optical properties and structural change of vacuum-deposited Cu 2- x Se films due to electromigration have been investigated using Au/Cu 2- x Se/Cu(or Au) samples. DC voltages were applied to them to cause Cu migration. Under the bias in which the polarity of the Cu electrode was nega...
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Published in: | Japanese Journal of Applied Physics 1990-10, Vol.29 (10R), p.2098 |
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Main Author: | |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Electrical and optical properties and structural change of vacuum-deposited Cu
2-
x
Se films due to electromigration have been investigated using Au/Cu
2-
x
Se/Cu(or Au) samples. DC voltages were applied to them to cause Cu migration. Under the bias in which the polarity of the Cu electrode was negative, Cu in Cu
2-
x
Se films decreased gradually, which increased Cu vacancies and carrier density. Under the bias in which the Cu electrode was positive, Cu ions were supplied to Cu
2-
x
Se films and Cu vacancies were filled, which decreased carrier density and changed the film structure to α-Cu
2-
x
Se. Small blocks of Cu accumulation were formed at the negative electrode edge. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.29.2098 |