E-beam direct-write in a dry-etched recess gate HEMT process for GaAs/AlGaAs circuits

We developed a technology to fabricate enhancement and depletion high electron mobility transistors (E- and D-HEMTs) with sub-0.5 µm gatelengths using e-beam direct-write lithography. The gates are recessed by dry etching. The recess is stopped on 30 Å AlGaAs layers for E- and D-field effect transis...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1990-10, Vol.29 (10), p.2317-2320
Main Authors: HÜLSMANN, A, KAUFEL, G, KÖHLER, K, RAYNOR, B, SCHNEIDER, J, JAKOBUS, T
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:We developed a technology to fabricate enhancement and depletion high electron mobility transistors (E- and D-HEMTs) with sub-0.5 µm gatelengths using e-beam direct-write lithography. The gates are recessed by dry etching. The recess is stopped on 30 Å AlGaAs layers for E- and D-field effect transistors (FETs) respectively. We have extensively investigated the double layer resist technique for direct-write to improve the reliability of 0.3 µm electron-beam (E-beam) lithography. Ring oscillators using direct coupled FET logic (DCFL) have been measured indicating delay times of 16 ps per stage.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.29.2317