AsH 3 Cracking Characteristics in Gas Source Molecular Beam Epitaxy

A time dependence of AsH 3 cracking characteristics in gas source molecular beam epitaxy using metalorganic and hydride gases was found. AsH 3 flow for about 1 hour was needed to create a stationary state in the cracking characteristics. During this transitional time, some arsenic, decomposition pro...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1990-12, Vol.29 (12R), p.2768
Main Authors: Ohbu, Isao, Tezen, Yuta, Ataka, Saburo, Mozume, Teruo
Format: Article
Language:English
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Summary:A time dependence of AsH 3 cracking characteristics in gas source molecular beam epitaxy using metalorganic and hydride gases was found. AsH 3 flow for about 1 hour was needed to create a stationary state in the cracking characteristics. During this transitional time, some arsenic, decomposition products of AsH 3 , was trapped in the cracking cell, and there was a limit to the amount of arsenic that was trapped. The amount of arsenic was limited by the existence of AsH 3 in the cracking zone which hindered the trapping of arsenic. The arsenic trapping might be caused by chemical reactions between arsenic and the cracking cell.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.29.2768