Low temperature vapor phase epitaxy of undoped ZnSe films on (100) GaAs using metallic Zn and Se

High-quality ZnSe films were grown at 290°C by VPE with an improved reaction apparatus: a reflection plate for Se vapor was prepared at the end of the nozzle. With this configuration, the growth rate became several times higher than that without such a plate. Exciton emissions including free exciton...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1990-12, Vol.29 (12), p.2820-2821
Main Authors: MURANOI, T, KUROSAWA, K, YAMAMOTO, K, MIYOKAWA, T, SHIMIZU, M, FURUKOSHI, M
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:High-quality ZnSe films were grown at 290°C by VPE with an improved reaction apparatus: a reflection plate for Se vapor was prepared at the end of the nozzle. With this configuration, the growth rate became several times higher than that without such a plate. Exciton emissions including free exciton line were predominant. The deep level emission was very low even at RT in the PL spectrum. The electron mobility was 2410 cm 2 /V·s at 77 K.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.29.2820