Influence of the surface condition on the thermal relaxation of strained SiGe molecular beam epitaxy layers

Dependence of the thermal stability of Si 1- x Ge x ( x =0.23, 500 Å) layers on the surface conditions was studied. It was found that the samples with the surface oxide film or carbide were much stabler than as-grown MBE layers without any oxide or carbide for ∼800°C annealing. This result suggests...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1990-12, Vol.29 (12), p.L2143-L2145
Main Authors: KANAYA, H, FUJII, K, CHO, Y, KUMAGAI, Y, HASEGAWA, F, YAMAKA, E
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physical properties of thin films, nonelectronic
Physics
Solid surfaces and solid-solid interfaces
Surface energy
thermodynamic properties
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Dependence of the thermal stability of Si 1- x Ge x ( x =0.23, 500 Å) layers on the surface conditions was studied. It was found that the samples with the surface oxide film or carbide were much stabler than as-grown MBE layers without any oxide or carbide for ∼800°C annealing. This result suggests that the thermal relaxation of the SiGe layers is greatly restrained by the surface oxide film or carbide, probably due to suppression of the introduction and/or propagation of dislocations by effects such as pinning at the surface.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.29.l2143