Water-adsorbed states on silicon and silicon oxide surfaces analyzed by using heavy water

Water-adsorbed states on Si, native oxide and thermal oxide surfaces are investigated by means of thermal desorption spectroscopy. D 2 O is used to detect the water signals from these surfaces, which are separated from background H 2 O signals. The water desorption is 1/10 less than the hydrogen des...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1990-03, Vol.29 (3), p.L490-L493
Main Authors: YABUMOTO, N, MINEGISHI, K, KOMINE, Y, SAITO, K
Format: Article
Language:English
Subjects:
Chemistry
Exact sciences and technology
General and physical chemistry
Solid-gas interface
Surface physical chemistry
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Summary:Water-adsorbed states on Si, native oxide and thermal oxide surfaces are investigated by means of thermal desorption spectroscopy. D 2 O is used to detect the water signals from these surfaces, which are separated from background H 2 O signals. The water desorption is 1/10 less than the hydrogen desorption. The amount of hydrogen adsorbed is largest on the Si surface and smallest on the thermal oxide surface. Four types of binding states of hydrogen are assigned to be SiO-H and Si-H on the silicon surface, Si-H in the native oxide, and Si-H in the interface between the native oxide and the silicon substrate.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.29.l490