Preferential PtSi Formation in Thermal Reaction between Pt and Si 0.8 Ge 0.2 MBE Layers

Thermal reactions between Pt and Si 0.8 Ge 0.2 MBE layers were studied by sputtering AES and X-ray diffraction measurements. Pt(1000 A)/Si 0.8 Ge 0.2 (1000 A) annealed at 300°C for 3 hours or at 400°C for 1 hour formed Pt 2 (Si 0.8 Ge 0.2 ) 1 or Pt 1 (Si 0.8 Ge 0.2 ) 1 , respectively. The sample ann...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1990-06, Vol.29 (6A), p.L850
Main Authors: Kanaya, Hiroyuki, Cho, Yukiko, Hasegawa, Fumio, Yamaka, Eiso
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Thermal reactions between Pt and Si 0.8 Ge 0.2 MBE layers were studied by sputtering AES and X-ray diffraction measurements. Pt(1000 A)/Si 0.8 Ge 0.2 (1000 A) annealed at 300°C for 3 hours or at 400°C for 1 hour formed Pt 2 (Si 0.8 Ge 0.2 ) 1 or Pt 1 (Si 0.8 Ge 0.2 ) 1 , respectively. The sample annealed at 400°C for 16 hours showed a slight accumulation of Ge at the Pt(SiGe)/Si interface, and the annealing at 500°C for 1 hour repelled the Ge from the surface Pt(SiGe) layer to form a Ge-rich SiGe epitaxial layer at the PtSi/Si interface. These results suggest a stronger bonding of Pt-Si than Pt-Ge and a possible preferential formation of PtSi at the interface even for lower annealing temperatures.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.29.L850