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Preferential PtSi Formation in Thermal Reaction between Pt and Si 0.8 Ge 0.2 MBE Layers
Thermal reactions between Pt and Si 0.8 Ge 0.2 MBE layers were studied by sputtering AES and X-ray diffraction measurements. Pt(1000 A)/Si 0.8 Ge 0.2 (1000 A) annealed at 300°C for 3 hours or at 400°C for 1 hour formed Pt 2 (Si 0.8 Ge 0.2 ) 1 or Pt 1 (Si 0.8 Ge 0.2 ) 1 , respectively. The sample ann...
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| Published in: | Japanese Journal of Applied Physics 1990-06, Vol.29 (6A), p.L850 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c800-d0ea912fe457a56d9215b3bbd89be9459194f5893b6de2b9f3b0935f8cc6e66f3 |
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| cites | cdi_FETCH-LOGICAL-c800-d0ea912fe457a56d9215b3bbd89be9459194f5893b6de2b9f3b0935f8cc6e66f3 |
| container_end_page | |
| container_issue | 6A |
| container_start_page | L850 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 29 |
| creator | Kanaya, Hiroyuki Cho, Yukiko Hasegawa, Fumio Yamaka, Eiso |
| description | Thermal reactions between Pt and Si
0.8
Ge
0.2
MBE layers were studied by sputtering AES and X-ray diffraction measurements. Pt(1000 A)/Si
0.8
Ge
0.2
(1000 A) annealed at 300°C for 3 hours or at 400°C for 1 hour formed Pt
2
(Si
0.8
Ge
0.2
)
1
or Pt
1
(Si
0.8
Ge
0.2
)
1
, respectively. The sample annealed at 400°C for 16 hours showed a slight accumulation of Ge at the Pt(SiGe)/Si interface, and the annealing at 500°C for 1 hour repelled the Ge from the surface Pt(SiGe) layer to form a Ge-rich SiGe epitaxial layer at the PtSi/Si interface. These results suggest a stronger bonding of Pt-Si than Pt-Ge and a possible preferential formation of PtSi at the interface even for lower annealing temperatures. |
| doi_str_mv | 10.1143/JJAP.29.L850 |
| format | article |
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0.8
Ge
0.2
MBE layers were studied by sputtering AES and X-ray diffraction measurements. Pt(1000 A)/Si
0.8
Ge
0.2
(1000 A) annealed at 300°C for 3 hours or at 400°C for 1 hour formed Pt
2
(Si
0.8
Ge
0.2
)
1
or Pt
1
(Si
0.8
Ge
0.2
)
1
, respectively. The sample annealed at 400°C for 16 hours showed a slight accumulation of Ge at the Pt(SiGe)/Si interface, and the annealing at 500°C for 1 hour repelled the Ge from the surface Pt(SiGe) layer to form a Ge-rich SiGe epitaxial layer at the PtSi/Si interface. These results suggest a stronger bonding of Pt-Si than Pt-Ge and a possible preferential formation of PtSi at the interface even for lower annealing temperatures.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.29.L850</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1990-06, Vol.29 (6A), p.L850</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c800-d0ea912fe457a56d9215b3bbd89be9459194f5893b6de2b9f3b0935f8cc6e66f3</citedby><cites>FETCH-LOGICAL-c800-d0ea912fe457a56d9215b3bbd89be9459194f5893b6de2b9f3b0935f8cc6e66f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kanaya, Hiroyuki</creatorcontrib><creatorcontrib>Cho, Yukiko</creatorcontrib><creatorcontrib>Hasegawa, Fumio</creatorcontrib><creatorcontrib>Yamaka, Eiso</creatorcontrib><title>Preferential PtSi Formation in Thermal Reaction between Pt and Si 0.8 Ge 0.2 MBE Layers</title><title>Japanese Journal of Applied Physics</title><description>Thermal reactions between Pt and Si
0.8
Ge
0.2
MBE layers were studied by sputtering AES and X-ray diffraction measurements. Pt(1000 A)/Si
0.8
Ge
0.2
(1000 A) annealed at 300°C for 3 hours or at 400°C for 1 hour formed Pt
2
(Si
0.8
Ge
0.2
)
1
or Pt
1
(Si
0.8
Ge
0.2
)
1
, respectively. The sample annealed at 400°C for 16 hours showed a slight accumulation of Ge at the Pt(SiGe)/Si interface, and the annealing at 500°C for 1 hour repelled the Ge from the surface Pt(SiGe) layer to form a Ge-rich SiGe epitaxial layer at the PtSi/Si interface. These results suggest a stronger bonding of Pt-Si than Pt-Ge and a possible preferential formation of PtSi at the interface even for lower annealing temperatures.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNotkN1KwzAcxYMoWKd3PkAewNZ8r7mcY5uOikULXoak_QcrXStJQfb2ZurV4RwOB84PoVtKCkoFv9_vV3XBdFGVkpyhjHKxzAVR8hxlhDCaC83YJbqK8TNZJQXN0HsdwEOAce7tgOv5rcfbKRzs3E8j7kfcfEByA34F2_5mDuZvgDFVsR07nPqkKPEOkjD8_LDBlT1CiNfowtshws2_LlCz3TTrx7x62T2tV1XeloTkHQGrKfMg5NJK1WlGpePOdaV2oIXUVAsvS82d6oA57bkjmktftq0CpTxfoLu_2TZMMaYr5iv0BxuOhhJzYmJOTAzT5sSE_wAx6lJq</recordid><startdate>19900601</startdate><enddate>19900601</enddate><creator>Kanaya, Hiroyuki</creator><creator>Cho, Yukiko</creator><creator>Hasegawa, Fumio</creator><creator>Yamaka, Eiso</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19900601</creationdate><title>Preferential PtSi Formation in Thermal Reaction between Pt and Si 0.8 Ge 0.2 MBE Layers</title><author>Kanaya, Hiroyuki ; Cho, Yukiko ; Hasegawa, Fumio ; Yamaka, Eiso</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c800-d0ea912fe457a56d9215b3bbd89be9459194f5893b6de2b9f3b0935f8cc6e66f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kanaya, Hiroyuki</creatorcontrib><creatorcontrib>Cho, Yukiko</creatorcontrib><creatorcontrib>Hasegawa, Fumio</creatorcontrib><creatorcontrib>Yamaka, Eiso</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kanaya, Hiroyuki</au><au>Cho, Yukiko</au><au>Hasegawa, Fumio</au><au>Yamaka, Eiso</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preferential PtSi Formation in Thermal Reaction between Pt and Si 0.8 Ge 0.2 MBE Layers</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1990-06-01</date><risdate>1990</risdate><volume>29</volume><issue>6A</issue><spage>L850</spage><pages>L850-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Thermal reactions between Pt and Si
0.8
Ge
0.2
MBE layers were studied by sputtering AES and X-ray diffraction measurements. Pt(1000 A)/Si
0.8
Ge
0.2
(1000 A) annealed at 300°C for 3 hours or at 400°C for 1 hour formed Pt
2
(Si
0.8
Ge
0.2
)
1
or Pt
1
(Si
0.8
Ge
0.2
)
1
, respectively. The sample annealed at 400°C for 16 hours showed a slight accumulation of Ge at the Pt(SiGe)/Si interface, and the annealing at 500°C for 1 hour repelled the Ge from the surface Pt(SiGe) layer to form a Ge-rich SiGe epitaxial layer at the PtSi/Si interface. These results suggest a stronger bonding of Pt-Si than Pt-Ge and a possible preferential formation of PtSi at the interface even for lower annealing temperatures.</abstract><doi>10.1143/JJAP.29.L850</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1990-06, Vol.29 (6A), p.L850 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_29_L850 |
| source | Institute of Physics IOPscience extra; Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
| title | Preferential PtSi Formation in Thermal Reaction between Pt and Si 0.8 Ge 0.2 MBE Layers |
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