Electrical Properties of A II B VI Compounds, CdSe and ZnTe

The electrical resistivities and the Hall coefficients are determined for stoichiometric, non-stoichiometric and impurity-doped CdSe and ZnTe crystals. From these observations it is concluded that the impurity centers contributing to the electrical conduction are Se-vacancies in CdSe and Zn-vacancie...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1963-05, Vol.2 (5), p.259
Main Author: Tubota, Hirosi
Format: Article
Language:English
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Summary:The electrical resistivities and the Hall coefficients are determined for stoichiometric, non-stoichiometric and impurity-doped CdSe and ZnTe crystals. From these observations it is concluded that the impurity centers contributing to the electrical conduction are Se-vacancies in CdSe and Zn-vacancies in ZnTe. It is shown that the first ionization energy of a Zn-vacancy is 0.035 eV and the second 0.25 eV. The band gap is estimated at 1.88 eV for CdSe, and 2.12 eV for ZnTe. The Hall mobility of ZnTe varies as T -1.50 in the high temperature region. In addition, the behaviors of the contact between metals and CdSe are studied. In makes a good ohmic contact.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.2.259