Damage induced by electron cyclotron resonance plasma etching on silicon surface

Physical and electrical damage induced on silicon surfaces by electron cyclotron resonance (ECR) plasma etching is studied. In sulfurhexalluoride (SF 6 ) plasma etching, shallow (less than 750 Å) electrical damage is induced in the surface. Damage density increases markedly with the increase of micr...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1991-05, Vol.30 (5), p.1045-1049
Main Authors: WASHIDZU, G, HARA, T, HIYOSHI, J, SASAKI, M, SUZUKI, Y, UKAI, K
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Mechanical and acoustical properties
adhesion
Physics
Solid surfaces and solid-solid interfaces
Solid-fluid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Physical and electrical damage induced on silicon surfaces by electron cyclotron resonance (ECR) plasma etching is studied. In sulfurhexalluoride (SF 6 ) plasma etching, shallow (less than 750 Å) electrical damage is induced in the surface. Damage density increases markedly with the increase of microwave power. Deeper (1 µm) damage is formed when radio frequency (RF) bias power is added. This damage can be eliminated by annealing at 200°C. In Ar plasma etching, however, thin (∼80 Å) physical damage is induced.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.30.1045