ZnO Thin Films Prepared by Ion-Assisted Deposition Methods

Transparent conducting ZnO films were prepared by an ion-assisted deposition method. The glass substrate was irradiated with Ar ions during deposition of amorphous films and the c -axis-oriented ZnO film with the lowest resistivity is obtained when the growing film is irradiated with Ar plasma. Opti...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1991-08, Vol.30 (8R), p.1830
Main Authors: Miyamoto, Kazuhiro, Yoshida, Makoto, Toyotama, Hideki, Onari, Seinosuke, Arai, Toshihiro
Format: Article
Language:English
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Summary:Transparent conducting ZnO films were prepared by an ion-assisted deposition method. The glass substrate was irradiated with Ar ions during deposition of amorphous films and the c -axis-oriented ZnO film with the lowest resistivity is obtained when the growing film is irradiated with Ar plasma. Optical emission lines due to Ar, Zn 2 , Zn and O of neutral species were detected. In particular, the ratio of emission line intensity O(777 nm)/Zn(635 nm) is closely related with film properties. The control of plasma conditions by the check of the emission line intensity provides a method of obtaining a high-quality transparent conducting ZnO film.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.30.1830