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YBa 2 Cu 3 O 7-δ Angle Grain Boundary Junction on Si Bicrystal Substrate
Si bicrystal substrates with angle grain boundaries (AGB) have been fabricated for the first time by a diffusion bonding technique using the hot-press method. YBa 2 Cu 3 O 7-δ (YBCO) epitaxial thin films are grown on the Si bicrystal substrates with yttria (Y 2 O 3 ) and yttria-stabilized zirconia (...
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| Published in: | Japanese Journal of Applied Physics 1991-09, Vol.30 (9R), p.1964 |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c804-9b25e7d4882cec4f586977d287b5e604f9da1c49f3703a8068fd9bfe83a5a2c33 |
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| cites | cdi_FETCH-LOGICAL-c804-9b25e7d4882cec4f586977d287b5e604f9da1c49f3703a8068fd9bfe83a5a2c33 |
| container_end_page | |
| container_issue | 9R |
| container_start_page | 1964 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 30 |
| creator | Chen, Jian Yamashita, Tsutomu Suzuki, Hajime Nakajima, Kensuke Kurosawa, Hideyuki Mutoh, Yoshiharu Hirotsu, Yoshihiko Myoren, Hiroaki Osaka, Yukio |
| description | Si bicrystal substrates with angle grain boundaries (AGB) have been fabricated for the first time by a diffusion bonding technique using the hot-press method. YBa
2
Cu
3
O
7-δ
(YBCO) epitaxial thin films are grown on the Si bicrystal substrates with yttria (Y
2
O
3
) and yttria-stabilized zirconia (YSZ) buffer layers by rf magnetron sputtering. The properties of bridge-type junctions patterned by excimer laser have been studied from 4.2 K to 77 K and by microwave irradiation. It is found that the critical current density of the AGB junction (
J
c
A
) is always less than that of either bridge made on single-crystal grains (
J
c
G
). The effects of the temperature and microwave radiation show that the properties of the bridges on the grains are limited by flux creep. In contrast, the properties of the AGB junction with the angle larger than 10° show the Josephson effect. |
| doi_str_mv | 10.1143/JJAP.30.1964 |
| format | article |
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2
Cu
3
O
7-δ
(YBCO) epitaxial thin films are grown on the Si bicrystal substrates with yttria (Y
2
O
3
) and yttria-stabilized zirconia (YSZ) buffer layers by rf magnetron sputtering. The properties of bridge-type junctions patterned by excimer laser have been studied from 4.2 K to 77 K and by microwave irradiation. It is found that the critical current density of the AGB junction (
J
c
A
) is always less than that of either bridge made on single-crystal grains (
J
c
G
). The effects of the temperature and microwave radiation show that the properties of the bridges on the grains are limited by flux creep. In contrast, the properties of the AGB junction with the angle larger than 10° show the Josephson effect.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.30.1964</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1991-09, Vol.30 (9R), p.1964</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c804-9b25e7d4882cec4f586977d287b5e604f9da1c49f3703a8068fd9bfe83a5a2c33</citedby><cites>FETCH-LOGICAL-c804-9b25e7d4882cec4f586977d287b5e604f9da1c49f3703a8068fd9bfe83a5a2c33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Chen, Jian</creatorcontrib><creatorcontrib>Yamashita, Tsutomu</creatorcontrib><creatorcontrib>Suzuki, Hajime</creatorcontrib><creatorcontrib>Nakajima, Kensuke</creatorcontrib><creatorcontrib>Kurosawa, Hideyuki</creatorcontrib><creatorcontrib>Mutoh, Yoshiharu</creatorcontrib><creatorcontrib>Hirotsu, Yoshihiko</creatorcontrib><creatorcontrib>Myoren, Hiroaki</creatorcontrib><creatorcontrib>Osaka, Yukio</creatorcontrib><title>YBa 2 Cu 3 O 7-δ Angle Grain Boundary Junction on Si Bicrystal Substrate</title><title>Japanese Journal of Applied Physics</title><description>Si bicrystal substrates with angle grain boundaries (AGB) have been fabricated for the first time by a diffusion bonding technique using the hot-press method. YBa
2
Cu
3
O
7-δ
(YBCO) epitaxial thin films are grown on the Si bicrystal substrates with yttria (Y
2
O
3
) and yttria-stabilized zirconia (YSZ) buffer layers by rf magnetron sputtering. The properties of bridge-type junctions patterned by excimer laser have been studied from 4.2 K to 77 K and by microwave irradiation. It is found that the critical current density of the AGB junction (
J
c
A
) is always less than that of either bridge made on single-crystal grains (
J
c
G
). The effects of the temperature and microwave radiation show that the properties of the bridges on the grains are limited by flux creep. In contrast, the properties of the AGB junction with the angle larger than 10° show the Josephson effect.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNotkE1KxDAAhYMoWEd3HiAHMGP-f5Zt0XHKwAgzG1clTROp1FaSdjH38hyeyQ4KDx7f5vH4ALgneE0IZ49Vlb-u2QJG8guQEcYV4liKS5BhTAnihtJrcJPSx4JScJKB7VthIYXlDBncQ4V-vmE-vPcebqLtBliM89DaeILVPLipGwe45NDBonPxlCbbw8PcpCnayd-Cq2D75O_-ewWOz0_H8gXt9pttme-Q05gj01DhVcu1ps47HoSWRqmWatUILzEPprXEcROYwsxqLHVoTRO8ZlZY6hhbgYe_WRfHlKIP9VfsPpeLNcH12UJ9tlCzBRYL7BcPYE3y</recordid><startdate>19910901</startdate><enddate>19910901</enddate><creator>Chen, Jian</creator><creator>Yamashita, Tsutomu</creator><creator>Suzuki, Hajime</creator><creator>Nakajima, Kensuke</creator><creator>Kurosawa, Hideyuki</creator><creator>Mutoh, Yoshiharu</creator><creator>Hirotsu, Yoshihiko</creator><creator>Myoren, Hiroaki</creator><creator>Osaka, Yukio</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19910901</creationdate><title>YBa 2 Cu 3 O 7-δ Angle Grain Boundary Junction on Si Bicrystal Substrate</title><author>Chen, Jian ; Yamashita, Tsutomu ; Suzuki, Hajime ; Nakajima, Kensuke ; Kurosawa, Hideyuki ; Mutoh, Yoshiharu ; Hirotsu, Yoshihiko ; Myoren, Hiroaki ; Osaka, Yukio</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c804-9b25e7d4882cec4f586977d287b5e604f9da1c49f3703a8068fd9bfe83a5a2c33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Jian</creatorcontrib><creatorcontrib>Yamashita, Tsutomu</creatorcontrib><creatorcontrib>Suzuki, Hajime</creatorcontrib><creatorcontrib>Nakajima, Kensuke</creatorcontrib><creatorcontrib>Kurosawa, Hideyuki</creatorcontrib><creatorcontrib>Mutoh, Yoshiharu</creatorcontrib><creatorcontrib>Hirotsu, Yoshihiko</creatorcontrib><creatorcontrib>Myoren, Hiroaki</creatorcontrib><creatorcontrib>Osaka, Yukio</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Jian</au><au>Yamashita, Tsutomu</au><au>Suzuki, Hajime</au><au>Nakajima, Kensuke</au><au>Kurosawa, Hideyuki</au><au>Mutoh, Yoshiharu</au><au>Hirotsu, Yoshihiko</au><au>Myoren, Hiroaki</au><au>Osaka, Yukio</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>YBa 2 Cu 3 O 7-δ Angle Grain Boundary Junction on Si Bicrystal Substrate</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1991-09-01</date><risdate>1991</risdate><volume>30</volume><issue>9R</issue><spage>1964</spage><pages>1964-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Si bicrystal substrates with angle grain boundaries (AGB) have been fabricated for the first time by a diffusion bonding technique using the hot-press method. YBa
2
Cu
3
O
7-δ
(YBCO) epitaxial thin films are grown on the Si bicrystal substrates with yttria (Y
2
O
3
) and yttria-stabilized zirconia (YSZ) buffer layers by rf magnetron sputtering. The properties of bridge-type junctions patterned by excimer laser have been studied from 4.2 K to 77 K and by microwave irradiation. It is found that the critical current density of the AGB junction (
J
c
A
) is always less than that of either bridge made on single-crystal grains (
J
c
G
). The effects of the temperature and microwave radiation show that the properties of the bridges on the grains are limited by flux creep. In contrast, the properties of the AGB junction with the angle larger than 10° show the Josephson effect.</abstract><doi>10.1143/JJAP.30.1964</doi></addata></record> |
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| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1991-09, Vol.30 (9R), p.1964 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_30_1964 |
| source | Institute of Physics IOPscience extra; Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
| title | YBa 2 Cu 3 O 7-δ Angle Grain Boundary Junction on Si Bicrystal Substrate |
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