Scatterings of shallow threshold voltage on Si-implanted WN self-alignment gate GaAs metal-semiconductor field-effect transistors on different composition 2-inch substrates by growing in three kinds of furnaces

• Published in: Japanese Journal of Applied Physics 1991-10, Vol.30 (10), p.2432-2437
• Main Authors: SAITO, Y, FUKUDA, K, UCHITOMI, N, NOZAKI, C, YASUAMI, S, NISHIO, J, YASHIRO, S, WASHIZUKA, S, WATANABE, M, HIROSE, M, KITAURA, Y
• Format: Article
• Language: English
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.30.2432

Two-inch undoped GaAs crystal boules were grown from different composition melts in a pyrolytic boron nitride crucible in three kinds of furnaces in order to survey composition effect through a consecutive thermal cooling cycle after crystallization on Vth scattering of Si-implanted metal-semiconductor field-effect transistors (MESFETs). On the substrates (dislocation density: 2×10 3 -10 5 cm -2 order) obtained from the crystal boules, a tungsten nitride self-alignment gate MESFET array of shallow Vth (3×10 12 cm -2 , 50 keV) was fabricated, and Vth scatterings were observed on them. The Vth scattering for the most As-rich melt-grown crystal boule in the furnace with the smallest ratio of bottom heating was the smallest as compared with those for the slightly Ga-rich or As-rich melt-grown crystal boules in the furnaces with the greatest ratio of bottom heating. There was an anticorrelation between the Vth scattering amplitude and carbon content in the substrate crystals.