Evaluation of device charging in ion implantation

Device charging in the ion implantation is evaluated by using two different types of electrically erasable-programmable read-only memory (EEPROM) devices and two different types of metal-oxide-semiconductor (MOS) capacitors. The averaged charging voltage is measured by the turn-on voltage shift (Δ V...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1991-11, Vol.30 (11B), p.3223-3227
Main Authors: NAMURA, T, ISHIKAWA, K, AOKI, N, FUKUZAKI, Y, TODOKORO, Y, INOUE, M
Format: Article
Language:English
Subjects:
Applied sciences
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
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Summary:Device charging in the ion implantation is evaluated by using two different types of electrically erasable-programmable read-only memory (EEPROM) devices and two different types of metal-oxide-semiconductor (MOS) capacitors. The averaged charging voltage is measured by the turn-on voltage shift (Δ V T ) of a grounded source EEPROM, while the transient charging effect is detected by a floating source EEPROM. The yield of the MOS capacitor reaches its maximum when the grounded source EEPROM shows the minimum Δ V T . The effects of the charge-collecting electrode area and substrate type of the MOS capacitor are also examined.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.30.3223