Photoluminescence of Si 1-x Ge x /Si Quantum Well Structures

Photoluminescence (PL) spectra of Si 1- x Ge x /Si multiple quantum wells (MQW) grown by molecular beam epitaxy (MBE) have been investigated. Strong emission bands appear for all the as-grown samples. The PL intensity is increased by a factor of 5-10 after the annealing at 600-700°C. The annealing a...

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Published in:Japanese Journal of Applied Physics 1991-12, Vol.30 (12S), p.3601
Main Authors: Terashima, Koichi, Tajima, Michio, Ikarashi, Nobuyuki, Taeko Niino, Taeko Niino, Toru Tatsumi, Toru Tatsumi
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container_issue 12S
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container_title Japanese Journal of Applied Physics
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creator Terashima, Koichi
Tajima, Michio
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Toru Tatsumi, Toru Tatsumi
description Photoluminescence (PL) spectra of Si 1- x Ge x /Si multiple quantum wells (MQW) grown by molecular beam epitaxy (MBE) have been investigated. Strong emission bands appear for all the as-grown samples. The PL intensity is increased by a factor of 5-10 after the annealing at 600-700°C. The annealing at 800°C results in the disappearance of the strong emission bands. The dependence of the PL intensity on the excitation power density indicates that some recombination center is involved in the strong emission. Annealing effects of the PL spectra can be explained as the behavior of this recombination center under the heat treatments. Transmission electron microscopy (TEM) observations show that the quality of the quantum well structures is related to the observed PL characteristics. The intense PL may be due to the two-dimensional carrier confinement.
doi_str_mv 10.1143/JJAP.30.3601
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title Photoluminescence of Si 1-x Ge x /Si Quantum Well Structures
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