High-mobility bottom-gate thin-film transistors with laser-crystallized and hydrogen-radical-annealed polysilicon films

High-performance bottom-gate thin-film transistors (TFTs) have been realized with excimer-laser-crystallized polysilicon films, for the first time. TFT characteristics were greatly dependent on the silicon film thickness as well as the pulsed-laser energy density. It was found also that posthydrogen...

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Published in:Japanese Journal of Applied Physics 1991-12, Vol.30 (12B), p.3704-3709
Main Authors: SHIMIZU, K, HOSOYA, H, SUGIURA, O, MATSUMURA, M
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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cited_by cdi_FETCH-LOGICAL-c291t-bc02c83ccbde57e36d594d9133bd70b2e109f9c2f1d3b5d56fa736d41f5f6b213
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description High-performance bottom-gate thin-film transistors (TFTs) have been realized with excimer-laser-crystallized polysilicon films, for the first time. TFT characteristics were greatly dependent on the silicon film thickness as well as the pulsed-laser energy density. It was found also that posthydrogenation based on hydrogen-radical annealing improves the TFT characteristics drastically. The field-effect mobilities exceeded 220 cm 2 /Vs for electrons and 140 cm 2 /Vs for holes, respectively.
doi_str_mv 10.1143/JJAP.30.3704
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source Institute of Physics IOPscience extra; Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title High-mobility bottom-gate thin-film transistors with laser-crystallized and hydrogen-radical-annealed polysilicon films
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