Transient Rapid Thermal Annealing of Low-Dose High-Energy Phosphorus Implanted Silicon

A novel low thermal budget post-implantation annealing technique, the transient RTA (T-RTA) is proposed for low-dose high-energy P-implanted silicon wafers. Results with this short time ( t eff =300 ms) annealing on 3 ′′ substrates proved to be superior to conventional furnace anneal performance. Sp...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1991-02, Vol.30 (2R), p.418
Main Authors: Bársony, István, Heideman, Jean-Luc, Middelhoek, Jos Klappe
Format: Article
Language:English
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Summary:A novel low thermal budget post-implantation annealing technique, the transient RTA (T-RTA) is proposed for low-dose high-energy P-implanted silicon wafers. Results with this short time ( t eff =300 ms) annealing on 3 ′′ substrates proved to be superior to conventional furnace anneal performance. Spreading Resistance carrier profiling and High Resolution X-ray Diffraction measurements indicated full dopant activation, minimum profile motion and complete damage removal. According to minority carrier lifetime profiling results, generation rates below 0.3 mA/cm 3 could be achieved in the region of interest for device applications. Inhomogeneity of the sheet resistivity due to transient temperature gradients across the wafer remained below 2%, which is comparable or lower than those of furnace annealed samples.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.30.418