Zero-field time-of-flight measurements of electron diffusion in P+-GaAs

Minority electron diffusivities in p + -GaAs-doped N A ≃1.4×10 18 and ∼10 19 cm -3 have been measured in zero-field conditions with an extension of the zero-field time-of-flight technique. Extension of the technique to make it applicable to heavily doped p + -GaAs is described and zero-field data ar...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1991-02, Vol.30 (2A), p.L135-L137
Main Authors: LOVEJOY, M. L, KEYES, B. M, KLAUSMEIER-BROWN, M. E, MELLOCH, M. R, AHRENKIEL, R. K, LUNDSTROM, M. S
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
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Summary:Minority electron diffusivities in p + -GaAs-doped N A ≃1.4×10 18 and ∼10 19 cm -3 have been measured in zero-field conditions with an extension of the zero-field time-of-flight technique. Extension of the technique to make it applicable to heavily doped p + -GaAs is described and zero-field data are discussed. Unexpectedly, majority carrier drag effects are not evident in a comparison of this data with recently reported high-field data. Low zero-field mobility of electrons in p + -GaAs has important implications for high-speed devices such as heterojunction bipolar transistors.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.30.l135