A new type of heterojunction a-Si photodiode for lensless contact-type image sensor

Using boron-doped and nondoped a-SiO x :H layers as photoreception windows, an ITO/a-SiO x (B):H/a-SiO x :H/a-Si:H/Cr heterojunction photodiode is constructed. The collection efficiency for photocarriers is improved over the wavelength range of visible light by this structure. The photo/dark current...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1991-08, Vol.30 (8B), p.L1505-L1507
Main Authors: SHIDOH, Y, HAGA, K, YAMAMOTO, K, MURAKAMI, A, KUMANO, M, WATANABE, H
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Using boron-doped and nondoped a-SiO x :H layers as photoreception windows, an ITO/a-SiO x (B):H/a-SiO x :H/a-Si:H/Cr heterojunction photodiode is constructed. The collection efficiency for photocarriers is improved over the wavelength range of visible light by this structure. The photo/dark current ratio of 5×10 3 is obtained at an applied voltage of -5 V. The photocurrent retains over 80% of its initial value over 2×10 4 seconds under the irradiation of AM1. With this photodiode, a lensless contact-type image sensor is realized with 8 bits/mm, A4 size and 2.5 ms/line.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.30.l1505