A new high electron mobility transistor (HEMT) structure with a narrow quantum well formed by inserting a few monolayers in the channel

A new HEMT wafer has been developed whose channel layer has a narrow bandgap semiconductor with a few monolayers inserted at an optimum position in the channel, namely, the point where the probability density of electrons is maximum in the lowest subband and negligible in the first excited subband....

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1991-02, Vol.30 (2A), p.L166-L169
Main Authors: MATSUMARA, K, INOUE, D, NAKANO, H, SAWADA, M, HARADA, Y, NAKAKADO, T
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:A new HEMT wafer has been developed whose channel layer has a narrow bandgap semiconductor with a few monolayers inserted at an optimum position in the channel, namely, the point where the probability density of electrons is maximum in the lowest subband and negligible in the first excited subband. The Al 0.22 Ga 0.78 As/In 0.15 Ga 0.85 As pseudomorphic HEMT wafer with one InAs monolayer inserted at the optimum position has provided Hall electron mobility increments nearly 15% higher at 300 K and 20% higher at 77 K than those of conventional pseudomorphic HEMT wafers.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.30.L166