Photoluminescence from GaAs/CaF 2 /Si Structure Grown by Electron-Beam Exposure (EBE) and Epitaxy Method

The GaAs layers grown on CaF 2 /Si(111) structures by the electron-beam exposure and epitaxy (EBE-epitaxy) method were studied by photoluminescence (PL) measurements at the temperatures ranging from 10 K to 300 K for the first time. It is shown that the EBE-epitaxy was effective to improve the PL in...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1991-03, Vol.30 (3B), p.L444
Main Authors: Uchigoshi, Masahiro, Kazuo Tsutsui, Kazuo Tsutsui, Seijiro Furukawa, Seijiro Furukawa
Format: Article
Language:English
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Summary:The GaAs layers grown on CaF 2 /Si(111) structures by the electron-beam exposure and epitaxy (EBE-epitaxy) method were studied by photoluminescence (PL) measurements at the temperatures ranging from 10 K to 300 K for the first time. It is shown that the EBE-epitaxy was effective to improve the PL intensity of the GaAs layer grown on CaF 2 /Si structure, and this structure has a high potential for optical device applications. Furthermore, the stress of the GaAs layer grown on CaF 2 /Si substrate is expected to be reduced by the CaF 2 layer compared with that of GaAs/Si structure.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.30.L444