Junction Characteristics of an Au/Ba 1-x K x BiO 3 /Niobium-Doped SrTiO 3 Structure

Au/Ba 1- x K x BiO 3 and Ba 1- x K x BiO 3 /niobium-doped SrTiO 3 , two types of junctions which correspond to the emitter base and base collector in superconducting base transistors, respectively, have been fabricated and studied. The highest T c end point ( T c0 ) of 28 K was obtained of thin film...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1992-09, Vol.31 (9R), p.2716
Main Authors: Suzuki, Hiroshi, Iyori, Masahiro, Yamamoto, Tetsuya, Suzuki, Seiji, Takahashi, Kazuhiko, Tatsuro Usuki, Tatsuro Usuki, Yorinobu Yoshisato, Yorinobu Yoshisato
Format: Article
Language:English
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Summary:Au/Ba 1- x K x BiO 3 and Ba 1- x K x BiO 3 /niobium-doped SrTiO 3 , two types of junctions which correspond to the emitter base and base collector in superconducting base transistors, respectively, have been fabricated and studied. The highest T c end point ( T c0 ) of 28 K was obtained of thin film Ba 1- x K x BiO 3 by rf-sputtering method. The Au/Ba 1- x K x BiO 3 tunnel spectrum showed a clear gap structure and was very close to the ideal Bardeen Cooper Schrieffer theory's (BCS) form with Δ(0)=3.19 meV. The Ba 1- x K x BiO 3 /SrTiO 3 (Nb) junction with heavy niobium doping (0.1 wt%) showed tunnellike I-V characteristics. The d I /d V spectrum for a high- T c superconductor/semiconductor junction displayed the energy gap structure of a superconductor.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.31.2716