Error Analysis in Electron Beam Lithography System -Thermal Effects on Positioning Accuracy

Thermal effects on positioning accuracy in an electron beam lithography system have been evaluated. In order to make 5X reticles for 0.3-µm ULSIs, positioning accuracy as small as 0.06 µm is required. Thermal effects are significant problems in achieving highly accurate reticle judging from position...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1992-12, Vol.31 (12S), p.4253
Main Authors: Ohta, Hiroya, Matsuzaka, Takashi, Saitou, Norio, Kawasaki, Katsuhiro, Nakamura, Kazumitsu, Kohno, Toshihiko, Hoga, Morihisa
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Thermal effects on positioning accuracy in an electron beam lithography system have been evaluated. In order to make 5X reticles for 0.3-µm ULSIs, positioning accuracy as small as 0.06 µm is required. Thermal effects are significant problems in achieving highly accurate reticle judging from positioning error analysis. In this study, internal thermal effects were investigated; these were (1) heating by electron beam illumination and (2) stage friction with step-and-repeat movement. As a result, the positioning error due to electron beam illumination is negligibly small compared with 0.06 µm and the stage temperature fluctuation must be controlled within 0.07°C to maintain a positioning error within 0.06 µm. Furthermore, internal thermal effects of the system could be fatal in next-generation electron beam lithography systems without improvement of materials and systems.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.31.4253