Surface-Imaged Silicon Polymers for 193-nm Excimer Laser Lithography

• Published in: Japanese Journal of Applied Physics 1992-12, Vol.31 (12S), p.4327
• Main Authors: Kunz, Roderick R., Horn, Mark W., Wallraff, Greg M., Bianconi, Patricia A., Miller, Robert D., Goodman, Russell W., Smith, David A., Eshelman, Jon R., Ginsberg, Eric J.
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.31.4327

A negative-tone surface-imaged resist process based upon the area-selective oxidation of silicon-backbone polymers, is described. A bromine-based plasma is the resist developer, where the oxidized polymer inhibits the bromine-initiated etching to yield a negative-tone image. Using either polysilanes or polysilynes, resist sensitivities in the range of 50 mJ/cm 2 have been obtained and resolutions to 0.2 µm achieved. Photosensitizers can be added to further accelerate the photoxidation, resulting in sensitivities less than 20 mJ/cm 2 . The latent image formation is reciprocal with respect to fluence in the range 0.05 to 1.5 mJ/cm 2 per pulse and with respect to repetition rate. The photooxidation contrast is one, whereas the bromine-based etch step can have a contrast as high as 5. In addition, the exposure, focus, and development latitudes have all been characterized and compared to other surface-imaged 193-nm resist systems. When high-ion-density plasma sources are used, throughput levels appropriate for single-wafer processing can be achieved.