Vanadium-related deep levels in n-silicon detected by junction capacitance waveform analysis

Multiexponential (ME-) and spectral analysis (SA-) Deep Level Transient Spectroscopy (DLTS) are made on vanadium-related deep levels in n-silicon. We resolved three traps with large amplitude and three more traps with comparatively small amplitude, VA (Δ E =0.08 eV, σ=3.2×10 -18 cm 2 ), VB (Δ E =0.2...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1992, Vol.31 (1), p.87-88
Main Authors: KAWAHARA, H, OKAMOTO, Y, TAHIRA, K, MORIMOTO, J, MIYAKAWA, T, NAKASHIMA, H
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
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Summary:Multiexponential (ME-) and spectral analysis (SA-) Deep Level Transient Spectroscopy (DLTS) are made on vanadium-related deep levels in n-silicon. We resolved three traps with large amplitude and three more traps with comparatively small amplitude, VA (Δ E =0.08 eV, σ=3.2×10 -18 cm 2 ), VB (Δ E =0.28 eV, σ=2.6×10 -14 cm 2 ) and VC (Δ E =0.24 eV, σ=8.4×10 -18 cm 2 ). These vanadium-related levels do not have appreciable broadening of the emission rate spectrum.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.31.87