Chemical Vapor Deposition of Cu Film on SiO 2 Using Cyclopentadienylcoppertriethylphosphine

Chemical vapor deposition of Cu film on SiO 2 has been studied using cyclopentadienylcoppertriethylphosphine (C 5 H 5 CuP(C 2 H 5 ) 3 ), which contains no oxygen atom itself. The deposited Cu films had complete (111) preferred orientation for deposition temperatures below 450°C. From Auger electron...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1992-12, Vol.31 (12B), p.L1778
Main Authors: Chichibu, Shigefusa, Yoshida, Nobuhide, Higuchi, Hirofumi, Satoru Matsumoto, Satoru Matsumoto
Format: Article
Language:English
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Summary:Chemical vapor deposition of Cu film on SiO 2 has been studied using cyclopentadienylcoppertriethylphosphine (C 5 H 5 CuP(C 2 H 5 ) 3 ), which contains no oxygen atom itself. The deposited Cu films had complete (111) preferred orientation for deposition temperatures below 450°C. From Auger electron spectroscopy measurements, no simultaneous incorporation of oxygen during the deposition has been confirmed. Relatively low temperature deposition is preferable to reduce the condensation of deposited Cu.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.31.L1778