Property Control for High-Quality Ba 1-x K x BiO 3 Epitaxial Thin Films Prepared by High-Pressure Reactive rf-Magnetron Sputtering

The electrical properties of Ba 1- x K x BiO 3 (BKBO) epitaxial thin films on SrTiO 3 (110) substrates have been successfully controlled using high-pressure reactive rf-magnetron sputtering under an 80-Pa discharge gas. We investigated the relationship between the target composition and the electric...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1993-05, Vol.32 (5R), p.1946
Main Authors: Iyori, Masahiro, Suzuki, Seiji, Suzuki, Hiroshi, Yamano, Koji, Takahashi, Kazuhiko, Usuki, Tatsuro, Yorinobu Yoshisato, Yorinobu Yoshisato, Shoichi Nakano, Shoichi Nakano
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The electrical properties of Ba 1- x K x BiO 3 (BKBO) epitaxial thin films on SrTiO 3 (110) substrates have been successfully controlled using high-pressure reactive rf-magnetron sputtering under an 80-Pa discharge gas. We investigated the relationship between the target composition and the electrical properties of BKBO films. The zero resistance temperature ( T ce ) and the temperature dependence of resistivity above the superconducting onset temperature ( T co ) were found to be primarily influenced by the ratio of Ba/K and the Bi content of the target composition, respectively. Electrical measurements showed that the highest Tce of as-grown BKBO epitaxial film was 28 K.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.32.1946