Preparation, Processing and Tunneling in YBa 2 Cu 3 O 7-δ -Pb Native-Barrier Structures

We have developed a procedure for the preparation of small (40×40 µm 2 ) window-type YBa 2 Cu 3 O 7-δ -Pb junctions with YSZ insulator and native tunnel barrier. We present the patterning technique of the two electrodes based on photolithography and wet etching. The nature of the barrier is found to...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1993-06, Vol.32 (6R), p.2648
Main Authors: Frangi, Francesca, Dwir, Benjamin, James, Jonathan H., Andrea Gauzzi, Andrea Gauzzi, Davor Pavuna, Davor Pavuna
Format: Article
Language:English
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Summary:We have developed a procedure for the preparation of small (40×40 µm 2 ) window-type YBa 2 Cu 3 O 7-δ -Pb junctions with YSZ insulator and native tunnel barrier. We present the patterning technique of the two electrodes based on photolithography and wet etching. The nature of the barrier is found to be semiconducting. The tunneling measurements show gap-like feature of YBa 2 Cu 3 O 7-δ at 8.5 meV and some additional features related to Pb and YBa 2 Cu 3 O 7-δ phonon spectra.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.32.2648