A novel contactless and nondestructive measurement method of surface recombination velocity on silicon surfaces by photoluminescence

A novel photoluminescence (PL)-based measurement method for the surface recombination velocity, S , is presented. It consists of detailed measurement of the band-edge photoluminescence efficiency as a function of the excitation intensity, and its subsequent analysis by computer. The measurement prin...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1993, Vol.32 (1B), p.272-277
Main Authors: SAITOH, T, NISHIMOTO, Y, SAWADA, T, HASEGAWA, H
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A novel photoluminescence (PL)-based measurement method for the surface recombination velocity, S , is presented. It consists of detailed measurement of the band-edge photoluminescence efficiency as a function of the excitation intensity, and its subsequent analysis by computer. The measurement principle and the computer analysis procedure are presented, as well as detailed discussion on the underlying recombination physics. As a demonstration, the new method is applied to various unpassivated and passivated Si wafers, giving the values of S under 1 sun condition of 3000 cm/s-50000 cm/s. It is also pointed out that the value of S is considerably reduced by concentrated sunlight. By this method, the value of S under device operation conditions as well as N ss distribution can be determined in a contactless and nondestructive fashion.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.32.272