Estimation of the thickness of ultrathin silicon nitride films by X-ray photoelectron spectroscopy

The thickness and composition of ultrathin silicon nitride films which are deposited on Si substrates and on thin thermal oxide are estimated by means of X-ray photoelectron spectroscopy (XPS). With use of the peak decomposition technique and angle-resolved XPS (ARXPS), the distribution of the silic...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1993-08, Vol.32 (8), p.3580-3583
Main Authors: MUTO, A, MINE, T, NAKAZAWA, M
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The thickness and composition of ultrathin silicon nitride films which are deposited on Si substrates and on thin thermal oxide are estimated by means of X-ray photoelectron spectroscopy (XPS). With use of the peak decomposition technique and angle-resolved XPS (ARXPS), the distribution of the silicon nitride and oxide in the films is determined. Both the nitride and oxide thicknesses are evaluated. The thickness determined by XPS agrees with the thickness determined by cross-sectional transmission electron microscopy (TEM). This XPS method is valid for estimation of the thickness and composition of ultrathin silicon nitride films, and it has the advantages of accuracy over ellipsometry and convenience over TEM.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.32.3580