Structural and Electrical Characterization of SrTiO 3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition

SrTiO 3 thin films were prepared on Si and Pt/TaO x /Si substrates by Sr(DPM) 2 /Ti( i -OC 3 H 7 ) 4 /O 2 /Ar chemical vapor deposition (CVD), using a simple vaporizing-and-transport source delivery system. A thickness uniformity of ±5.6% and a composition uniformity of ±2.7% were obtained. The diel...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1993-09, Vol.32 (9S), p.4069
Main Authors: Yamaguchi, Hiromu, Lesaicherre, Pierre-Yves, Sakuma, Toshiyuki, Miyasaka, Yoichi, Ishitani, Akihiko, Masaji Yoshida, Masaji Yoshida
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:SrTiO 3 thin films were prepared on Si and Pt/TaO x /Si substrates by Sr(DPM) 2 /Ti( i -OC 3 H 7 ) 4 /O 2 /Ar chemical vapor deposition (CVD), using a simple vaporizing-and-transport source delivery system. A thickness uniformity of ±5.6% and a composition uniformity of ±2.7% were obtained. The dielectric constant was 210 for 110 nm thick SrTiO 3 films (Sr/(Sr+Ti)=0.5) annealed at 600°C for 2 hours. An SiO 2 equivalent thickness of 1.1 nm was obtained for 40 nm thick SrTiO 3 films, and leakage current densities were 6×10 -8 A/cm 2 at 1.0 V and 5×10 -7 A/cm 2 at 1.65 V. The structural and electrical properties were affected by the film composition.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.32.4069