Structural and Electrical Characterization of SrTiO 3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition

SrTiO 3 thin films were prepared on Si and Pt/TaO x /Si substrates by Sr(DPM) 2 /Ti( i -OC 3 H 7 ) 4 /O 2 /Ar chemical vapor deposition (CVD), using a simple vaporizing-and-transport source delivery system. A thickness uniformity of ±5.6% and a composition uniformity of ±2.7% were obtained. The diel...

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Published in:Japanese Journal of Applied Physics 1993-09, Vol.32 (9S), p.4069
Main Authors: Yamaguchi, Hiromu, Lesaicherre, Pierre-Yves, Sakuma, Toshiyuki, Miyasaka, Yoichi, Ishitani, Akihiko, Masaji Yoshida, Masaji Yoshida
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cited_by cdi_FETCH-LOGICAL-c809-a89ecf2045d88ce3e9a4e65126f24e1bdf877c0591bdcd29cc52fabfb92332603
cites cdi_FETCH-LOGICAL-c809-a89ecf2045d88ce3e9a4e65126f24e1bdf877c0591bdcd29cc52fabfb92332603
container_end_page
container_issue 9S
container_start_page 4069
container_title Japanese Journal of Applied Physics
container_volume 32
creator Yamaguchi, Hiromu
Lesaicherre, Pierre-Yves
Sakuma, Toshiyuki
Miyasaka, Yoichi
Ishitani, Akihiko
Masaji Yoshida, Masaji Yoshida
description SrTiO 3 thin films were prepared on Si and Pt/TaO x /Si substrates by Sr(DPM) 2 /Ti( i -OC 3 H 7 ) 4 /O 2 /Ar chemical vapor deposition (CVD), using a simple vaporizing-and-transport source delivery system. A thickness uniformity of ±5.6% and a composition uniformity of ±2.7% were obtained. The dielectric constant was 210 for 110 nm thick SrTiO 3 films (Sr/(Sr+Ti)=0.5) annealed at 600°C for 2 hours. An SiO 2 equivalent thickness of 1.1 nm was obtained for 40 nm thick SrTiO 3 films, and leakage current densities were 6×10 -8 A/cm 2 at 1.0 V and 5×10 -7 A/cm 2 at 1.65 V. The structural and electrical properties were affected by the film composition.
doi_str_mv 10.1143/JJAP.32.4069
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_32_4069</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_32_4069</sourcerecordid><originalsourceid>FETCH-LOGICAL-c809-a89ecf2045d88ce3e9a4e65126f24e1bdf877c0591bdcd29cc52fabfb92332603</originalsourceid><addsrcrecordid>eNotkMtOwzAURC0EEqWw4wP8AaT4lTReVqU8qqJWasQ2cpxrapQm0bW7KF9PAqxmZjFncQi552zGuZKP6_ViN5NiplimL8iESzVPhp5ekgljgidKC3FNbkL4GmaWKj4hcR_xZOMJTUNNW9NVAzait8NcHgwaGwH9t4m-a2nn6B4Lv6WSFgff0mffHAPdIfQGoabVmb5DHI5b_DSttwMAjr-kD9N3SJ-g74IfSbfkypkmwN1_TknxvCqWr8lm-_K2XGwSmzOdmFyDdYKptM5zCxK0UZClXGROKOBV7fL53LJUD9XWQlubCmcqV2khpciYnJKHP6zFLgQEV_bojwbPJWflKKwchZVSlKMw-QNxNF9z</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Structural and Electrical Characterization of SrTiO 3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition</title><source>Institute of Physics IOPscience extra</source><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Yamaguchi, Hiromu ; Lesaicherre, Pierre-Yves ; Sakuma, Toshiyuki ; Miyasaka, Yoichi ; Ishitani, Akihiko ; Masaji Yoshida, Masaji Yoshida</creator><creatorcontrib>Yamaguchi, Hiromu ; Lesaicherre, Pierre-Yves ; Sakuma, Toshiyuki ; Miyasaka, Yoichi ; Ishitani, Akihiko ; Masaji Yoshida, Masaji Yoshida</creatorcontrib><description>SrTiO 3 thin films were prepared on Si and Pt/TaO x /Si substrates by Sr(DPM) 2 /Ti( i -OC 3 H 7 ) 4 /O 2 /Ar chemical vapor deposition (CVD), using a simple vaporizing-and-transport source delivery system. A thickness uniformity of ±5.6% and a composition uniformity of ±2.7% were obtained. The dielectric constant was 210 for 110 nm thick SrTiO 3 films (Sr/(Sr+Ti)=0.5) annealed at 600°C for 2 hours. An SiO 2 equivalent thickness of 1.1 nm was obtained for 40 nm thick SrTiO 3 films, and leakage current densities were 6×10 -8 A/cm 2 at 1.0 V and 5×10 -7 A/cm 2 at 1.65 V. The structural and electrical properties were affected by the film composition.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.32.4069</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1993-09, Vol.32 (9S), p.4069</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c809-a89ecf2045d88ce3e9a4e65126f24e1bdf877c0591bdcd29cc52fabfb92332603</citedby><cites>FETCH-LOGICAL-c809-a89ecf2045d88ce3e9a4e65126f24e1bdf877c0591bdcd29cc52fabfb92332603</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Yamaguchi, Hiromu</creatorcontrib><creatorcontrib>Lesaicherre, Pierre-Yves</creatorcontrib><creatorcontrib>Sakuma, Toshiyuki</creatorcontrib><creatorcontrib>Miyasaka, Yoichi</creatorcontrib><creatorcontrib>Ishitani, Akihiko</creatorcontrib><creatorcontrib>Masaji Yoshida, Masaji Yoshida</creatorcontrib><title>Structural and Electrical Characterization of SrTiO 3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition</title><title>Japanese Journal of Applied Physics</title><description>SrTiO 3 thin films were prepared on Si and Pt/TaO x /Si substrates by Sr(DPM) 2 /Ti( i -OC 3 H 7 ) 4 /O 2 /Ar chemical vapor deposition (CVD), using a simple vaporizing-and-transport source delivery system. A thickness uniformity of ±5.6% and a composition uniformity of ±2.7% were obtained. The dielectric constant was 210 for 110 nm thick SrTiO 3 films (Sr/(Sr+Ti)=0.5) annealed at 600°C for 2 hours. An SiO 2 equivalent thickness of 1.1 nm was obtained for 40 nm thick SrTiO 3 films, and leakage current densities were 6×10 -8 A/cm 2 at 1.0 V and 5×10 -7 A/cm 2 at 1.65 V. The structural and electrical properties were affected by the film composition.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNotkMtOwzAURC0EEqWw4wP8AaT4lTReVqU8qqJWasQ2cpxrapQm0bW7KF9PAqxmZjFncQi552zGuZKP6_ViN5NiplimL8iESzVPhp5ekgljgidKC3FNbkL4GmaWKj4hcR_xZOMJTUNNW9NVAzait8NcHgwaGwH9t4m-a2nn6B4Lv6WSFgff0mffHAPdIfQGoabVmb5DHI5b_DSttwMAjr-kD9N3SJ-g74IfSbfkypkmwN1_TknxvCqWr8lm-_K2XGwSmzOdmFyDdYKptM5zCxK0UZClXGROKOBV7fL53LJUD9XWQlubCmcqV2khpciYnJKHP6zFLgQEV_bojwbPJWflKKwchZVSlKMw-QNxNF9z</recordid><startdate>19930901</startdate><enddate>19930901</enddate><creator>Yamaguchi, Hiromu</creator><creator>Lesaicherre, Pierre-Yves</creator><creator>Sakuma, Toshiyuki</creator><creator>Miyasaka, Yoichi</creator><creator>Ishitani, Akihiko</creator><creator>Masaji Yoshida, Masaji Yoshida</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19930901</creationdate><title>Structural and Electrical Characterization of SrTiO 3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition</title><author>Yamaguchi, Hiromu ; Lesaicherre, Pierre-Yves ; Sakuma, Toshiyuki ; Miyasaka, Yoichi ; Ishitani, Akihiko ; Masaji Yoshida, Masaji Yoshida</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c809-a89ecf2045d88ce3e9a4e65126f24e1bdf877c0591bdcd29cc52fabfb92332603</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yamaguchi, Hiromu</creatorcontrib><creatorcontrib>Lesaicherre, Pierre-Yves</creatorcontrib><creatorcontrib>Sakuma, Toshiyuki</creatorcontrib><creatorcontrib>Miyasaka, Yoichi</creatorcontrib><creatorcontrib>Ishitani, Akihiko</creatorcontrib><creatorcontrib>Masaji Yoshida, Masaji Yoshida</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yamaguchi, Hiromu</au><au>Lesaicherre, Pierre-Yves</au><au>Sakuma, Toshiyuki</au><au>Miyasaka, Yoichi</au><au>Ishitani, Akihiko</au><au>Masaji Yoshida, Masaji Yoshida</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural and Electrical Characterization of SrTiO 3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1993-09-01</date><risdate>1993</risdate><volume>32</volume><issue>9S</issue><spage>4069</spage><pages>4069-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>SrTiO 3 thin films were prepared on Si and Pt/TaO x /Si substrates by Sr(DPM) 2 /Ti( i -OC 3 H 7 ) 4 /O 2 /Ar chemical vapor deposition (CVD), using a simple vaporizing-and-transport source delivery system. A thickness uniformity of ±5.6% and a composition uniformity of ±2.7% were obtained. The dielectric constant was 210 for 110 nm thick SrTiO 3 films (Sr/(Sr+Ti)=0.5) annealed at 600°C for 2 hours. An SiO 2 equivalent thickness of 1.1 nm was obtained for 40 nm thick SrTiO 3 films, and leakage current densities were 6×10 -8 A/cm 2 at 1.0 V and 5×10 -7 A/cm 2 at 1.65 V. The structural and electrical properties were affected by the film composition.</abstract><doi>10.1143/JJAP.32.4069</doi></addata></record>
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title Structural and Electrical Characterization of SrTiO 3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T17%3A02%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Structural%20and%20Electrical%20Characterization%20of%20SrTiO%203%20Thin%20Films%20Prepared%20by%20Metal%20Organic%20Chemical%20Vapor%20Deposition&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Yamaguchi,%20Hiromu&rft.date=1993-09-01&rft.volume=32&rft.issue=9S&rft.spage=4069&rft.pages=4069-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.32.4069&rft_dat=%3Ccrossref%3E10_1143_JJAP_32_4069%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c809-a89ecf2045d88ce3e9a4e65126f24e1bdf877c0591bdcd29cc52fabfb92332603%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true