Switching and Fatigue Characteristics of (Pb, La)(Zr, Ti)O 3 Thin Films by Metalorganic Chemical Vapor Deposition

Lanthanum-modified lead zirconate titanate (PLZT) thin films (0.3∼0.4 µm) have been prepared on Pt/SiO 2 /Si substrates at 650°C by the metal-organic chemical vapor deposition (MOCVD) method. The electrical properties of the films were examined as a function of lanthanum content. The relative dielec...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1993-09, Vol.32 (9S), p.4082
Main Authors: Tominaga, Kouji, Shirayanagi, Atsuhiro, Takeshi Takagi, Takeshi Takagi, Masaru Okada, Masaru Okada
Format: Article
Language:English
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Summary:Lanthanum-modified lead zirconate titanate (PLZT) thin films (0.3∼0.4 µm) have been prepared on Pt/SiO 2 /Si substrates at 650°C by the metal-organic chemical vapor deposition (MOCVD) method. The electrical properties of the films were examined as a function of lanthanum content. The relative dielectric constants increased as the La content increased to about 5 at%, and beyond this value, it became constant at 600. The remanent polarization and coercive field decreased from 22 to 1 µC/cm 2 and from 90 to 20 kV/cm with increasing La content in the range of 0∼11 at%, respectively. The leakage current density decreased considerably with the addition of La, and was 8×10 -9 A/cm 2 at an applied voltage of 5 V. The switched charge densities of PLZT films showed almost no change up to switching cycles of 1×10 12 at a bipolar pulse of ±5 V.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.32.4082