Silicon nitride film for high-mobility thin-film transistor by hybrid-excitation chemical vapor deposition

A hybrid-excitation technique was applied to nitrify amorphous silicon (a-Si:H) film surface using ammonia (NH 3 ) gas and to deposit silicon nitride (SiN x ) film using disilane (Si 2 H 6 ) and NH 3 gases for an a-Si:H thin-film transistor (TFT) at 280°C. With the use of this SiN x film as a gate i...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1993, Vol.32 (1B), p.462-468
Main Authors: YAMAMOTO, S, MIGITAKA, M
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:A hybrid-excitation technique was applied to nitrify amorphous silicon (a-Si:H) film surface using ammonia (NH 3 ) gas and to deposit silicon nitride (SiN x ) film using disilane (Si 2 H 6 ) and NH 3 gases for an a-Si:H thin-film transistor (TFT) at 280°C. With the use of this SiN x film as a gate insulator, a coplanar a-Si:H TFT with high field-effect electron mobility (5.3 cm 2 /(V·s)) was fabricated. This high electron mobility is considered to be due to three features as follows: (1) a good SiN x /a-Si:H interface created by the hybrid-excited nitrification of the a-Si:H film surface, (2) an ion-bombardment-free nitrogen-rich SiN x film fabricated by hybrid-excitation chemical vapor deposition (CVD) and (3) an a-Si:H film with less ion-bombardment damage. This hybrid-excited nitrification and the CVD effects on electrical properties of SiN x /(100)Si interface are also discussed.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.32.462