Investigation of reoxidation and phosphorus behavior in HF-treated heavily doped silicon surfaces

• Published in: Japanese Journal of Applied Physics 1993-11, Vol.32 (11A), p.4863-4869
• Main Authors: KAMIURA, Y, MIZOKAWA, Y, IIDA, M, ISOBE, Y, KAWAMOTO, K
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Lithography, masks and pattern transfer; Materials science; Microelectronic fabrication (materials and surfaces technology); Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Solid-fluid interfaces; Surface treatments; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.32.4863

The thermally stimulated desorption (TSD) from aqueous HF-treated heavily phosphorus-doped Si(100) and polycrystalline Si surfaces was studied by Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS) and mass spectroscopy. Desorption analyses indicated that reoxidation takes place slightly, to the same extent in the doped Si(100) and polycrystalline Si surfaces owing to hydrogen desorption. Moreover, a large quantity of phosphorus segregates to the top few layers in the desorption process of the oxides. It was clarified that the HF-treated polycrystalline silicon surface is terminated by hydrogen and resists oxidation similarly to a single-crystal one.