In-situ characterization of compound semiconductor surfaces by novel photoluminescence surface state spectroscopy

The recently proposed novel photoluminescence surface state spectroscopy (PLS 3 ) technique is applied for in-situ , non-destructive and contactless characterization of variously processed surfaces of GaAs, InP and InGaAs. Chemically etched, anodized and passivated surfaces, as well as the original...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1993, Vol.32 (1B), p.511-517
Main Authors: SAWADA, T, NUMATA, K.-I, TOHDOH, S, SAITOH, T, HASEGAWA, H
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
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Summary:The recently proposed novel photoluminescence surface state spectroscopy (PLS 3 ) technique is applied for in-situ , non-destructive and contactless characterization of variously processed surfaces of GaAs, InP and InGaAs. Chemically etched, anodized and passivated surfaces, as well as the original as-received surface, give rise to U-shaped surface state density distributions with characteristic charge neutrality energy levels, E HO , which is consistent with the disorder induced gap state (DIGS) model. Annealing of as-received surfaces in hydrogen ambient leads to formation of discrete levels, possibly due to escape of As or P atoms. The effectiveness of a new UHV-based passivation scheme for InGaAs using an ultrathin MBE Si interface control layer (ICL) is also confirmed.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.32.511